NDLI: Reliability of compound semiconductor devices

Content Provider	IEEE Xplore Digital Library
Author	Fantini, F. Cattani, L. Dieci, D.
Copyright Year	1999
Description	Author affiliation: Dipartimento di Sci. dell'Ingegneria, Modena Univ., Italy (Fantini, F.)
Abstract	This paper reviews the reliability problems of compound semiconductor devices. These devices suffer from specific failure mechanisms, which are related to their limited maturity. Only the GaAs MESFETs exhibit a stable technology and an assessed reliability. The metallizations employed in HEMTs already benefit from this assessment. However, HEMTs are affected by problems related to hot carriers and impact ionization, due to the high electric fields in the channel. The trapping of carriers and the generation of defects in the different layers are responsible for the observed instabilities. The stability of the base dopant is the main reliability concern for HBTs. The Be outdiffuses from the base to the emitter and causes degradation in the device performances. The C exhibits a lower diffusivity, but it is affected by the presence of H, which causes gain variations.
Starting Page	299
Ending Page	310
File Size	1034105
Page Count	12
File Format	PDF
ISBN	0780352351
DOI	10.1109/ICMEL.2000.840578
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-14
Publisher Place	Yugoslavia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor device reliability Semiconductor devices HEMTs MODFETs Failure analysis Gallium arsenide MESFETs Metallization Hot carriers Impact ionization
Content Type	Text
Resource Type	Article

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