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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Habas, P. Mileusnic, S. Zivanov, T. |
| Copyright Year | 1999 |
| Description | Author affiliation: Dept. of Device Eng., Philips Semicond., Nijmegen, netherlands (Habas, P.) |
| Abstract | Split C-V measurements are evaluated as a characterization method for power VDMOSFETs. The measurement of the gate total capacitance results for VDMOSFETs in a complex curve which is superposition of the electron and hole, accumulation, depletion and inversion contributions of different interface regions. As opposed, in the split C-V measurements, giving gate-drain and gate-source capacitance, the electron and hole contributions of particular interface areas are separated. The structure of the split C-V characteristics and the gate total capacitance of a VDMOS cell is clarified. Interpretation of experimental results is confirmed by numerical 2D calculations of the split C-V characteristics by means of small signal ac analysis, and by numerical quasi-static analysis of the gate-capacitance components which originate from the different interface regions. The impact of the drain-source bias on the characteristics is explained. Applications are envisaged: measurements of technology parameters in VDMOSFETs, and separate measurement of the level of gate oxide degradation in the channel and in the epitaxial region after irradiation. |
| Starting Page | 339 |
| Ending Page | 342 |
| File Size | 505498 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780352351 |
| DOI | 10.1109/ICMEL.2000.840584 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-05-14 |
| Publisher Place | Yugoslavia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Capacitance-voltage characteristics Power measurement Capacitance measurement Charge carrier processes Signal analysis Pulse measurements Semiconductor process modeling MOS capacitors MOSFETs Stress measurement |
| Content Type | Text |
| Resource Type | Article |
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