NDLI: Trapping Domain Walls in Diode-like Structures

Content Provider	IEEE Xplore Digital Library
Author	Bryan, M.T. Schrefl, T. Gibbs, M.R. Allwood, D.A.
Copyright Year	2006
Description	Author affiliation: Univ. of Sheffield, Sheffield (Bryan, M.T.; Schrefl, T.; Gibbs, M.R.; Allwood, D.A.)
Abstract	Here, we simulate the operation of $Ni_{80}Fe_{20}$ domain wall diodes by solving the Landau-Lifshitz-Gilbert (LLG) equation. We show how the direction of motion affects the pinning of the wall and that the width of the output wire affects the diode operation. Here, domain walls are moved through the diode structure using a magnetic field, but recent experimental studies have shown that a diode-like operation is also seen using a bipolar spin-polarized current. The motion of domain walls through domain wall diodes has been simulated. The direction of wall motion determines where it is pinned prior to passing through the diode. The width of the output wire was varied to optimize the difference between the pass field in the forward and reverse directions.
Starting Page	758
Ending Page	758
File Size	238288
Page Count	1
File Format	PDF
ISBN	1424414792
DOI	10.1109/INTMAG.2006.376482
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Intermag Conference
Subject Keyword	Diodes Wire Magnetic domain walls Energy barrier Magnetic materials Magnetic fields Shape Anisotropic magnetoresistance Nanowires Magnetic switching
Content Type	Text
Resource Type	Article

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