NDLI: Magnetization reversal in half metallic Fe3O4 based pseudo spin valve nanomagnet arrays

Content Provider	IEEE Xplore Digital Library
Author	Tripathy, D. Adeyeye, A.O. Singh, N.
Copyright Year	2006
Description	Author affiliation: Nat. Univ. of Singapore, Singapore (Tripathy, D.; Adeyeye, A.O.; Singh, N.)
Abstract	Half metallic $Fe_{3}O_{4}$ with a fully spin-polarized band structure at the Fermi level is one of the most promising materials for magnetic random access memory (MRAM), which stores data in pseudo spin valve (PSV) or magnetic tunneling junction elements. Ordered arrays of such nanostructures provide the basic magnetic architecture required to produce MRAM. $Fe_{3}O_{4}$ (40 nm) / Cu $(t_{Cu})$ / $Ni_{80}Fe_{20}$ (30 nm) PSV structures were deposited on the patterned substrates using electron beam deposition technique. The M-H curves obtained for magnetic field applied along thetas = 0deg for an array of ellipse shaped $Fe_{3}O_{4}(40$ nm) / Cu (2 nm) / $Ni_{80}Fe_{20}$ (30 nm) PSV structure and a reference unpatterned film that was deposited under identical conditions. The reference film shows a sheared magnetization loop with high remanence, negligible coercive field and no distinct double switching characteristics. The anisotropy and interlayer coupling dominate the magnetic behaviour of the PSV elements.
Starting Page	375
Ending Page	375
File Size	924775
Page Count	1
File Format	PDF
ISBN	1424414792
DOI	10.1109/INTMAG.2006.376099
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Intermag Conference
Subject Keyword	Magnetization reversal Spin valves Iron Magnetic anisotropy Perpendicular magnetic anisotropy Magnetic materials Magnetic films Inorganic materials Nanostructured materials Random access memory
Content Type	Text
Resource Type	Article

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