NDLI: 56nm-pitch low-k/Cu dual-damascene interconnects integration with sidewall image transfer (SIT) patterning scheme

Content Provider	IEEE Xplore Digital Library
Author	Tagami, M. Shimada, K. Yin, Y. Ishikawa, M. Waskiewicz, C. Chen, S.-T. Shobha, H. Soda, E. Saulnier, N. Arnold, J.C. Colburn, M. Usui, T. Spooner, T.
Copyright Year	2012
Description	Author affiliation: Renesas Electronics, 257 Fuller Rd., Albany, NY 12203, USA (Tagami, M.; Soda, E.) \|\| Toshiba America Electronics Components, Inc., 257 Fuller Rd., Albany, NY 12203, USA (Shimada, K.; Ishikawa, M.; Usui, T.) \|\| IBM Corp., Albany Nanotech, 257 Fuller Rd., NY 12203, USA (Yin, Y.; Waskiewicz, C.; Chen, S.-T.; Shobha, H.; Saulnier, N.; Arnold, J.C.; Colburn, M.; Spooner, T.)
Abstract	Three metal level 56nm-pitch Cu dual damascene interconnects in k2.7 low-k ILD have been demonstrated by using sidewall-image-transfer (SIT) patterning scheme to investigate the feasibility of the SIT process for sub 50nm-pitch technology node. 45nm-pitch line resistance (R) and capacitance (C) simulation are performed to estimate the R-C variation for double patterning schemes. The photoresist mandrel SIT process for 56nm-pitch Cu line is investigated to develop the constant line pitch and less line edge roughness (LER). The basic electrical properties such as line open/short and via chain open/short yields are ∼100%. The 56nm-pitch R-C variation is comparable to simulated 80nm-pitch R-C variation. The SIT patterning process is a strong candidate to improve the R-C variation for sub50nm-pitch technology nodes.
Starting Page	1
Ending Page	3
File Size	1526948
Page Count	3
File Format	PDF
ISBN	9781467311380
e-ISBN	9781467311373
e-ISBN	9781467311366
DOI	10.1109/IITC.2012.6251664
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resists Capacitance Resistance Lithography Smoothing methods Tin
Content Type	Text
Resource Type	Article

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