NDLI: Low resistance wiring and 2Xnm void free fill with CVD Ruthenium liner and $DirectSeed^{TM}$ copper

Content Provider	IEEE Xplore Digital Library
Author	Rullan, J. Ishizaka, T. Cerio, F. Mizuno, S. Mizusawa, Y. Ponnuswamy, T. Reid, J. McKerrow, A. Chih-Chao Yang
Copyright Year	2010
Description	Author affiliation: TEL Technology Center, America, LLC, 255 Fuller Rd, Suite 244 Albany, NY 12203 (Rullan, J.; Cerio, F.; Mizuno, S.) \|\| Tokyo Electron AT LTD. 650 Mituszawa, Hosaka-cho, Nirasaki City, Yamanashi 407-0192 Japan (Ishizaka, T.; Mizusawa, Y.) \|\| Novellus Systems, 11155 SW Leveton Drive, Tualatin, OR 97062 (Ponnuswamy, T.; Reid, J.; McKerrow, A.) \|\| IBM at Albany Nanotechnology Research Center, 255 Fuller Rd, Albany, NY 12203 (Chih-Chao Yang)
Abstract	Chemical vapor deposited (CVD) Ruthenium liners and $DirectSeed^{TM}$ (DS) copper were used with advanced Electrofill processes to provide lower resistance wiring compared to results using CVD Ru and conventional physical vapor deposited (PVD) Cu seed for back end of line (BEOL) structures. Different annealing temperatures and simulated BEOL thermal stress builds were used to show the difference in resistance. The grain size was also compared to show that the Ru/DS process had larger grains than the Ru/flash-Cu (F-Cu) seed. To further show the advantage of the Ru/DS seed process as a solution for future generations, 2X nm trenches were shown to have complete gap fill and thereby eliminating the need for conventional PVD Cu seed.
Starting Page	1
Ending Page	3
File Size	584922
Page Count	3
File Format	PDF
ISBN	9781424476763
e-ISBN	9781424476787
DOI	10.1109/IITC.2010.5510705
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wiring Copper Atherosclerosis Thermal resistance Thermal stresses Chemical processes Chemical vapor deposition Simulated annealing Temperature Grain size
Content Type	Text
Resource Type	Article

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