NDLI: Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Jifa Hao Rioux, M. Awadelkarim, O.O.
Copyright Year	2011
Description	Author affiliation: Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802 (Awadelkarim, O.O.) \|\| Fairchild Semiconductor, 82 Running Hill Rd, South Portland, ME 04106 (Jifa Hao; Rioux, M.)
Abstract	High-temperature reverse-bias (HTRB) stress in a dry or a humid ambient is applied to power n-channel U-shaped trench-gated MOSFET (UMOSFETs). The HTRB is shown to induce negative-bias temperature instabilities (NBTI) in a parasitic p-channel MOSFET occurring in the n-channel UMOSFET during the stress. The manifestations of the NBTI were gate-controlled shifts in the threshold voltage, Vth, and in the drain-to-source leakage current, IDSS, following only humid HTRB stress. SEM inspection of UMOSFETs deprocessed to passivation showed the presence of passivation cracks on the edge termination only in devices that degraded with the HTRB stressing. Our results lead us to conclude that only humid HTRB/NBTI stress causes changes in Vth and IDDS. During the stress water or hydrogen species diffuse into the gate oxide through passivation cracks at the edge of the UMOSFET, and react with the gate oxide in the presence of holes and release protons. The protons are not confined to the gate oxide at the trench-bottom and are able to migrate up the oxide on the trench sidewalls.
Starting Page	129
Ending Page	132
File Size	421658
Page Count	4
File Format	PDF
ISBN	9781457701139
ISSN	19308841
e-ISBN	9781457701153
DOI	10.1109/IIRW.2011.6142607
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Stress Ions MOSFETs Protons Passivation Degradation
Content Type	Text
Resource Type	Article

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