NDLI: Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions

Content Provider	IEEE Xplore Digital Library
Author	Dammann, M. Baeumler, M. Gutle, F. Casar, M. Walcher, H. Waltereit, P. Bronner, W. Muller, S. Kiefer, R. Quay, R. Mikulla, M. Ambacher, O. Graff, A. Altmann, F. Simon, M.
Copyright Year	2011
Description	Author affiliation: Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany (Dammann, M.; Baeumler, M.; Gutle, F.; Casar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Muller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.) \|\| Fraunhofer Institute for Mechanics of Materials, Walter-Hülse-Strasse 1, 06120 Halle, Germany (Graff, A.; Altmann, F.; Simon, M.)
Abstract	The reliability and degradation mechanism of AlGaN/GaN single stage amplifiers after 10 GHz stress at a drain voltage of 42 V and channel temperatures above 250°C was investigated using electroluminescence (EL) imaging, infrared thermography, and TEM. The extrapolated median lifetime extracted from the Arrhenius plot is $510^{5}$ h at a channel temperature of 200°C, and the activation energy is 1.7 eV. Intermediate measurements during stress show a strong decrease of maximum drain current and gate leakage current. Physical failure analysis of faster degrading devices using EL showed that the 8 gate finger device changes from a homogeneous distribution before stress, where all gate fingers show approximately the same EL intensity, to a highly inhomogeneous distribution after stress, where one central gate finger shows a much higher EL intensity as compared to the others. Infrared thermography shows that the finger with the highest EL intensity operates at a higher channel temperature. TEM images of one stressed device reveal a dislocation below the gate on the source side edge and the formation of a void below the gate foot as the possible root cause of the observed degradation.
Starting Page	42
Ending Page	46
File Size	3196887
Page Count	5
File Format	PDF
ISBN	9781457701139
ISSN	19308841
e-ISBN	9781457701153
DOI	10.1109/IIRW.2011.6142585
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Logic gates Radio frequency Degradation Temperature measurement Gallium nitride Piezoelectric transducers
Content Type	Text
Resource Type	Article

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