NDLI: TCAD-based failure analysis and modeling of pit formation in GaN HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Seigenthaler, T. Weatherford, T. Porter, M.
Copyright Year	2011
Description	Author affiliation: Naval Postgraduate School, Code EC/WT, Monterey, CA 93943 (Seigenthaler, T.; Weatherford, T.; Porter, M.)
Abstract	High field DC life testing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) has shown that degradation of the devices leads to the formation of morphological pits near the gate edges of the device, which have been proposed to be a cause of drain current collapse and threshold voltage shift. In order to test various proposed physical mechanisms of pit formation in GaN HEMTs, we have utilized the Silvaco $ATLAS^{©},$ $ATHENA^{©}$ and $DevEdit^{©}$ TCAD software packages to create a model of pit formation in the AlGaN layer corresponding to experimental observations. The model allows for multiple theories of pit formation to be tested by correlating progressive expansion of the pit area with quantities such as vertical electric field magnitude and thermal gradients. Utilizing vertical electric field as the impetus for pit formation, along with a set pit growth rate of 10 A/iteration, the simulation shows complete drain current collapse in three iterations, corresponding to $7×10^{3}$ hours of DC stress based on experimentally observed square-root growth of the pit area with time. Suggestions for further uses of the model for investigation of pit formation in GaN HEMTs are discussed in the conclusion.
Starting Page	107
Ending Page	110
File Size	1436055
Page Count	4
File Format	PDF
ISBN	9781457701139
ISSN	19308841
e-ISBN	9781457701153
DOI	10.1109/IIRW.2011.6142601
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs MODFETs Gallium nitride Degradation Electric fields Aluminum gallium nitride Reliability
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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