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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pace, C. Crupi, F. Lombardo, S. Giusi, G. |
| Copyright Year | 2006 |
| Description | Author affiliation: DEIS, Calabria Univ., Arcavacata di Rende (Pace, C.; Crupi, F.) |
| Abstract | In this paper we propose a purposely designed instrumentation and the experimental set-up for the detection of single-electron phenomena in solid-state non-volatile memories based on silicon nanocrystals floating gate MOSFET. The stepwise evolution of the drain current of a memory cell, after a "write" operation, is monitored by means of a purposely designed low noise acquisition system with a bandwidth up to 10 kHz. The advantage of the measurement system background noise and bandwidth over traditional semiconductor parameter analyzer performance is evident on the detection and classification of single-electron events |
| Starting Page | 1856 |
| Ending Page | 1859 |
| File Size | 204878 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780393597 |
| ISSN | 10915281 |
| DOI | 10.1109/IMTC.2006.328280 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-04-24 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Instruments Nanocrystals Nonvolatile memory Bandwidth Solid state circuits Silicon MOSFET circuits Monitoring Semiconductor device noise Noise measurement wafer-level measurements MOSFET memory integrated circuits non-volatile memories |
| Content Type | Text |
| Resource Type | Article |
| Subject | Instrumentation Electrical and Electronic Engineering |
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