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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Verma, P. Kumar, A. Bhattacharya, A.N. Arora, R. |
| Copyright Year | 2015 |
| Description | Author affiliation: Space Applic. Centre, Indian Space Res. Organ., Ahmedabad, India (Verma, P.; Kumar, A.; Bhattacharya, A.N.; Arora, R.) |
| Abstract | A low loss wideband (1-7GHz) SPDT switch using 0.13μm GaAs/InAlAs MHEMT MMIC process is designed, fabricated and tested both on-wafer and in test fixture. The measured results are in close agreement with specifications and simulations, which exhibit insertion loss of 1.05 ±0.05dB, with isolation of 28dB, minimum. All three ports of this SPDT switch are well matched having return loss of more than 14 dB because of series-shunt topology. A series capacitor is also introduced in the common arm working as a DC block. The simulated 1-dB compression takes place at input power of more than +18dBm at 7 GHz and IIP3 is better than +33.5dBm. Being gate voltages of -1.5V and 0V, negligible (<;1mW) power is consumed while operating this switch. This SPDT switch measuring less than 1 mm2 in area enables on chip integration with high performance redundant Ka-band down-converter system-on-chip (SoC). Low loss, high isolation, compactness are the key features of this switch MMIC. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 406743 |
| Page Count | 4 |
| File Format | |
| e-ISBN | 9781479999859 |
| DOI | 10.1109/CONECCT.2015.7383880 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-07-10 |
| Publisher Place | India |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resistors HEMT Redundancy Switches Insertion loss Logic gates HEMTs MMICs Loss measurement System-on-chip |
| Content Type | Text |
| Resource Type | Article |
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