NDLI: TCAD assessment of nonconventional Dual Insulator Double Gate MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Yadav, S. Srivastava, A. Rahul, J. Kishor Jha, K.
Copyright Year	2012
Description	Author affiliation: Computational Nanoscience & Technology Laboratory, ABV-Indian Institute of Information Technology and Management, Gwalior, M.P., India (Srivastava, A.) \|\| VLSI Design Laboratory, Computational Nanoscience & Technology Laboratory, ABV-Indian Institute of Information Technology and Management, Gwalior, M.P., India (Yadav, S.; Rahul, J.; Kishor Jha, K.)
Abstract	In the present work we have introduced generic new type of Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET), with Dual Insulator (DI) architecture. The gate insulator of the Dual Insulator Double Gate (DIDG) MOSFET consists of two laterally placed insulator materials with different dielectric constants. This novel gate insulator structure takes advantage of difference of dielectric constants in such a way that the threshold voltage near the source is more positive than that near the drain (for n-channel DIDG MOSFET, opposite for p-channel DIDG MOSFET), resulting in a more rapid acceleration of charge carriers in the channel near the source and a screening effect near drain region of channel due to which device shows significant suppression in the drain conductance and a higher drain current than conventional Double Gate MOSFET.
Starting Page	462
Ending Page	465
File Size	963008
Page Count	4
File Format	PDF
ISBN	9781457715457
e-ISBN	9781457715464
DOI	10.1109/ICDCSyst.2012.6188757
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-15
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gate insulator Gate to channel capacitance DIDG MOSFET ATLAS devise simulator Drain conductance Dielectric constants MOSFET circuits Logic gates Insulators Dielectrics Hafnium compounds Substrates
Content Type	Text
Resource Type	Article

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