NDLI: Effect of substrate negative bias on GIDL current in LDD nMOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Chen Haifeng Du Huimin Guo Lixin
Copyright Year	2011
Description	Author affiliation: School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an, China (Chen Haifeng; Du Huimin; Guo Lixin)
Abstract	The effect of substrate negative bias VB on the gate-induced drain leakage (GIDL) current is studied. It is found that the negative VB leads GIDL current curve shifts upwards. The shift of GIDL current ΔID/ID increases with increasing \|VB\|. The GIDL current at VG=−0.2V (in the low field region) increases with increasing \|VB\| more largely than that at VG=−1.2V (in the high field region). This is because that the negative VB results in the additional GIDL tunneling current in the lateral direction and it has the different effects on the low field region and high field region. It is also found that ΔID/ID at VD=0.8V is larger than that at VD=0.4V under VG=−1.2V and is smaller than that at VD=0.4V under VG=−0.2V. This ascribes the different roles of the GIDL vertical tunneling current and the GIDL lateral current induced by negative VB on the whole GIDL current.
Starting Page	396
Ending Page	398
File Size	237870
Page Count	3
File Format	PDF
ISBN	9781612847191
e-ISBN	9781612847221
DOI	10.1109/MEC.2011.6025484
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-19
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gate to drain Tunneling MOSFET circuits Logic gates Silicon CMOS integrated circuits GIDL Substrates Band to band
Content Type	Text
Resource Type	Article

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