NDLI: Investigation of CMP on GaN substrate for led manufacturing

Content Provider	IEEE Xplore Digital Library
Author	Gong, Hua Pan, Guoshun Zou, Chunli Dan Yuhong Liu
Copyright Year	2015
Description	Author affiliation: State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China (Gong, Hua; Pan, Guoshun; Zou, Chunli; Dan; Yuhong Liu)
Abstract	The relationship between the surface characterization of GaN substrates after chemical mechanical polishing (CMP) and the pH value of CMP slurry under acidic conditions was investigated in detail. Atomic force microscope (AFM) was used for measuring the surface morphology, pit depth distribution, and atomic step-terrace structure. With the decrease of pH value from ∼6 to ∼2, the material removal rate (MRR) increased, and the pit depth reduced, resulting in smaller roughness (Ra). Based on an overall consideration of MRR and Ra, pH value of ∼2 was the most suitable acidic condition for GaN CMP, the corresponding MRR and Ra was ∼165nm/h and 0.65nm (scan area 30×30 µm2), respectively. After CMP with slurry under pH=∼2, an atomic step-terrace topography on GaN surface was observed clearly, besides, something like residual chemical product was also discovered. X-ray photoelectron spectroscopy (XPS) analysis indicated that the product was the residual oxides of GaN, which could be removed clearly by increasing the abrasive content. Ra was low to 0.06nm (scan area 1×1µm2) when the surface shows no residual chemical products. The detailed polishing process and mechanism of GaN CMP were also discussed in this paper.
Starting Page	1
Ending Page	4
File Size	955517
Page Count	4
File Format	PDF
ISBN	9781619565104
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Society
Subject Keyword	Atomic measurements Light emitting diodes Extraterrestrial measurements Manufacturing Gallium nitride Substrates Surface treatment
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Effect of photocatalytic oxidation technology on GaN CMP

Fabrication of freestanding membrane GaN light-emitting diode on Si substrate for MEMS applications

Enhancement of Extraction Efficiency in Laser-debonded GaN Light Emitting Diodes

GaN Substrate Technologies for Optical Devices

Study of GaN-based light-emitting diodes with double roughened surfaces

Study on GaN micro-rod growth by nature patterned sapphire substrate

LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges

Highly efficient InGaN/GaN blue LED grown on Si (111) substrate

Investigation of InGaN/GaN light emitting diodes by excimer laser etching

Investigation of CMP on GaN substrate for led manufacturing

Similar Documents

Effect of photocatalytic oxidation technology on GaN CMP

Fabrication of freestanding membrane GaN light-emitting diode on Si substrate for MEMS applications

Enhancement of Extraction Efficiency in Laser-debonded GaN Light Emitting Diodes

GaN Substrate Technologies for Optical Devices

Study of GaN-based light-emitting diodes with double roughened surfaces

Study on GaN micro-rod growth by nature patterned sapphire substrate

LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges

Highly efficient InGaN/GaN blue LED grown on Si (111) substrate

Investigation of InGaN/GaN light emitting diodes by excimer laser etching

Investigation of CMP on GaN substrate for led manufacturing