NDLI: Development of basic-type CMP/P-CVM fusion processing system (Type A) and its fundamental characteristics

Content Provider	IEEE Xplore Digital Library
Author	Shiozawa, Kousuke Sano, Yasuhisa Kurokawa, Syuhei Miyashita, Tadakazu Sumizawa, Haruo Doi, Toshiro Aida, Hideo Oyama, Koki Yamauchi, Kazuto
Copyright Year	2014
Description	Author affiliation: Graduate School of Engineering, Kyushu Univ. 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan (Kurokawa, Syuhei) \|\| NJC Institute of Technology, Namiki Precision Jewel Co., Ltd. 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan (Aida, Hideo; Oyama, Koki) \|\| R&D Department, Fujikoshi Machinery Corp. 1650 Kiyono, Matsushiro-machi, Nagano 381-1233, Japan (Miyashita, Tadakazu; Sumizawa, Haruo) \|\| Art, Science and Technology Center for Cooperative Research, Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan (Doi, Toshiro) \|\| Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan (Yamauchi, Kazuto) \|\| Graduate School of Engineering, Osaka Univ. 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan (Shiozawa, Kousuke; Sano, Yasuhisa)
Abstract	We propose a chemical mechanical polishing (CMP)/Plasma Chemical Vaporization Machining (P-CVM) fusion processing and developed basic type CMP/P-CVM fusion processing, which consists of mechanical polish part, P-CVM part, and sample holder moving between them. As a result of basic experiments using silicon carbide as a sample, it is found that Peak to valley of the surface profile can be reduced from 1500 nm to 200–300 nm by 40-times repetition of the mechanical polishing followed by P-CVM and the decrease rate of the height of the mesa structures by a CMP/P-CVM fusion processing is approximately 3.5 times larger than that of the mechanical polish.
Starting Page	275
Ending Page	278
File Size	1042884
Page Count	4
File Format	PDF
ISBN	9781479955565
e-ISBN	9781479955572
DOI	10.1109/ICPT.2014.7017298
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-11-19
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Planarization Silicon carbide Machining Etching Plasmas Chemicals
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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