NDLI: Atomically controlled surfacing of single crystalline SiC and GaN by catalyst-referred etching

Content Provider	IEEE Xplore Digital Library
Author	Yamauchi, Kazuto Isohashi, Ai Arima, Kenta Sano, Yasuhisa
Copyright Year	2014
Description	Author affiliation: Department of Precision Science & Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0817, Japan (Yamauchi, Kazuto; Isohashi, Ai; Arima, Kenta; Sano, Yasuhisa)
Abstract	A novel abrasive-free planarization method named catalyst-referred etching (CARE) was developed. In this method, a polishing pad coated by a catalytic material is used. During the processing, topmost areas of the work substrate, which contacts most frequently with the catalytic material, are preferentially etched off through the catalytically induced chemical reaction. This paper reviews the CARE method from the viewpoints of the equipment configuration and applicability to single crystalline 4H-SiC and GaN substrates and reports that an atomically well-ordered surface with a step-and-terrace structure was observed over the whole area of the 2 inch substrate. The height of the step was a single bilayer. In addition, The CARE was applied to oxidized materials of ZnO and sapphire and can also smoothen the surfaces to be the similar to those of 4H-SiC and GaN substrates.
Starting Page	139
Ending Page	141
File Size	669963
Page Count	3
File Format	PDF
ISBN	9781479955565
e-ISBN	9781479955572
DOI	10.1109/ICPT.2014.7017265
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-11-19
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Planarization Silicon carbide Surface morphology Gallium nitride Substrates
Content Type	Text
Resource Type	Article

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