NDLI: Thermal simulation of heterogeneous GaN/ InP/silicon 3DIC stacks

Content Provider	IEEE Xplore Digital Library
Author	Harris, T.R. Wyers, E.J. Lee Wang Graham, S. Pavlidis, G. Franzon, P.D. Davis, W.R.
Copyright Year	2015
Description	Author affiliation: Dept. of Eng. & Comput. Sci., Tarleton State Univ., Stephenville, TX, USA (Wyers, E.J.) \|\| Mentor Graphics Corp., Fremont, CA, USA (Lee Wang) \|\| Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA (Harris, T.R.; Franzon, P.D.; Davis, W.R.) \|\| Dept. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA, USA (Graham, S.; Pavlidis, G.)
Abstract	Integration of materials such as GaN, InP, SiGe, and Si is a natural extension of the 3D-IC perspective and provides a unique solution for high performance circuits. In this approach, application of a component is no longer dependent on semiconductor material selection. In this paper, preliminary results are presented which examine the thermal performance of the technology. A thermal analysis prototype solution in Mentor $Graphics^{™}$ $Calibre^{®}$ provides surface heat maps based on IC layout, material property, and geometric configuration files. Chiplets are connected by heterogeneous interconnect (HIC). Differences in thermal performance of GaN and InP chiplets are explored by varying the number of HICs. Two methods for building up the model of a test chip are compared. One method uses custom scripts to place discrete blocks in the model to represent HICs, while the other uses thermal material properties extracted from the layout. Measurements presented confirm simulated results.
File Size	1243050
File Format	PDF
e-ISBN	9781467393850
DOI	10.1109/3DIC.2015.7334616
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-08-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor device modeling Layout 3D-IC Thermal conductivity Thermal modeling Heterogeneous integration CMOS integrated circuits Gallium nitride III-V semiconductor materials Indium phosphide GaN HEMT Thermal simulation
Content Type	Text
Resource Type	Article

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