NDLI: Variation of thermal stress in TSV structures caused by crystallinity of electroplated copper interconnections

Content Provider	IEEE Xplore Digital Library
Author	Jiatong Liu Suzuki, K. Miura, H.
Copyright Year	2015
Description	Author affiliation: Dept. of Nanomech., Tohoku Univ., Sendai, Japan (Jiatong Liu) \|\| Fracture & Reliability Res. Inst., Tohoku Univ., Sendai, Japan (Suzuki, K.; Miura, H.)
Abstract	In this study, the change in residual stress in electroplated copper thin-film interconnections during thermal cycling was investigated from a view point of their initial crystallinity. The crystallinity is mainly dominated by the seed layer material for electroplating because of the lattice mismatch between the seed layer material and copper. By applying a ruthenium seed layer, which is effective for decreasing the lattice mismatch, the crystallinity of electroplated copper thin films was improved and their stability was very high during annealing up to 200°C. In addition, the amplitude of residual stress in the interconnection formed on the ruthenium seed layer decreased drastically during thermal cycling. Therefore, it is very important to improve the crystallinity of the interconnection for assuring the high thermal stability of 3D modules.
File Size	1113019
File Format	PDF
e-ISBN	9781467393850
DOI	10.1109/3DIC.2015.7334610
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-08-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Density measurement Films TSV Displacement measurement Silicon Crystallinity Reliability Electroplated copper interconnection Residual stress
Content Type	Text
Resource Type	Article

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