NDLI: Comprehensive comparison of 3D-TSV integrated solid-state drives (SSDs) with storage class memory and NAND flash memory

Content Provider	IEEE Xplore Digital Library
Author	Hachiya, S. Onagi, T. Ning, S. Takeuchi, K.
Copyright Year	2015
Description	Author affiliation: Chuo Univ., Tokyo, Japan (Hachiya, S.; Onagi, T.; Ning, S.; Takeuchi, K.)
Abstract	Three dimensional (3D) through-silicon via (TSV) integrated solid-state drive (SSD) with storage class memory (SCM) has been proposed as a candidate for the next generation storage drive. The 3D-TSV SSD has advantages of fast speed, low energy consumption, and high endurance [1-3]. This paper comprehensively compares the characteristics of SSDs with and without 3D-TSV. First, different data management algorithms are explained by using SSDs with different memory devices, respectively. Moreover, their write performances, energies and required minimum I/O data rates are simulated and compared. Specifically, the all SCM SSD increases write performance by 295 times compared with MLC only NAND flash SSD, due to the high SCM performance. As for the SCM/MLC NAND hybrid SSD, the write energy reduces 68% by applying 3D-TSV. In addition, only the all SCM SSD needs higher I/O data rate than the conventional 400 MBytes/s NAND flash I/O data rate.
File Size	1390778
File Format	PDF
e-ISBN	9781467393850
DOI	10.1109/3DIC.2015.7334572
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-08-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	NAND flash memory Storage calss memory (SCM) Three dimensinal through-silicon via (3D-TSV) Solid-state drive (SSD)
Content Type	Text
Resource Type	Article

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