NDLI: Enhanced spin lifetime in semiconductors with applied electric fields

Content Provider	IEEE Xplore Digital Library
Author	Ioakeimidi, K. Brachmann, A. Clendenin, J.E. Garwin, E.L. Kirby, R.E. Maruyama, T. Prescott, C.Y. Prepost, R. Mulhollan, G.A. Bierman, J.C.
Copyright Year	2007
Description	Author affiliation: Stanford Linear Accel. Center, Menlo Park (Ioakeimidi, K.; Brachmann, A.; Clendenin, J.E.; Garwin, E.L.; Kirby, R.E.; Maruyama, T.; Prescott, C.Y.)
Abstract	The GaAsP/GaAs superlattice (SL) structure has been widely recognized as the most efficient spin polarized electron source with 90% maximum polarization and more than 1% quantum efficiency. The main spin depolarization mechanisms in these structures are: interband absorption smearing due to band-edge fluctuations, hole scattering between the heavy hole (HH) and light hole (LH) states that causes a broadening of the LH band, spin precession due to an effective magnetic field generated by the lack of crystal inversion symmetry and spin orbit coupling.
Starting Page	1
Ending Page	1
File Size	678452
Page Count	1
File Format	PDF
ISBN	9781424409303
DOI	10.1109/CLEOE-IQEC.2007.4386779
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-17
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical polarization Gallium arsenide Schottky barriers Light scattering Superlattices Particle scattering Extraterrestrial measurements Semiconductor device doping Electrons Cathodes
Content Type	Text
Resource Type	Article

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Enhanced spin lifetime in semiconductors with applied electric fields

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