NDLI: SiC heteropolytype structures for optical applications

Content Provider	IEEE Xplore Digital Library
Author	Lebedev, A.A. Zelenin, V.V. Kuznetsov, A.N. Abramov, P.L. Smirnov, A.N. Davydov, S.Yu. Tregubova, A.S.
Copyright Year	2007
Description	Author affiliation: A.F. Ioffe Physico-Tech. Inst., St.Petersburg (Lebedev, A.A.; Zelenin, V.V.; Kuznetsov, A.N.; Abramov, P.L.; Smirnov, A.N.; Davydov, S.Yu.; Tregubova, A.S.)
Abstract	In present paper, 3C-SiC films grown by sublimation epitaxy in vacuum on 6H-SiC substrates with (0001) C orientation was investigated. X-ray diffraction analysis show that this epilayers has high structural perfection. Raman spectroscopy study shows that 3C-SiC epitaxial layers was grown on 6H-SiC without arising any intermediate layers. Within the EL spectrum of p-6H-SiC/n-3C-SiC heterostructures was simultaneously presence of EL band, connected with free exiton recombination in both SiC polytypes. Found also was a shift of EL peak, connected with free exiton recombination in 3C-SiC, in 3C-SiC/6H-SiC heterojunction, to short wave spectral region. It is concluded that optoelectronic devices, such as quantum cascade lasers or QW detectors with unique parameters, can be developed using SiC polytype heterostructures without any problems with the lattice mismatch and interface roughness, encountered in the case of conventional semiconductor heterostructures.
Starting Page	1
Ending Page	1
File Size	123629
Page Count	1
File Format	PDF
ISBN	9781424409303
DOI	10.1109/CLEOE-IQEC.2007.4386223
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-17
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spectroscopy Optical diffraction Silicon carbide Raman scattering Radiative recombination X-ray diffraction Epitaxial growth Optical films Quantum cascade lasers Substrates
Content Type	Text
Resource Type	Article

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