NDLI: A gate driver of SiC MOSFET with passive triggered auxiliary transistor in a phase-leg configuration

Content Provider	IEEE Xplore Digital Library
Author	Qi Zhou Feng Gao Tao Jiang
Copyright Year	2015
Description	Author affiliation: Sch. of Electr. Eng., Shandong Univ. Jinan, Jinan, China (Qi Zhou; Feng Gao) \|\| Beijing Qifeng Energy-storage Technol. Co. Ltd., Beijing, China (Tao Jiang)
Abstract	This paper proposes a low cost gate driver of Silicon Carbide (SiC) MOSFET with a passive triggered auxiliary transistor in a phase-leg configuration. Silicon Carbide MOSFET can work on high blocking voltage and high switching frequency with less temperature drift. However, high switching speed may amplify the negative influence of parasitic components and produce significant voltage spikes during switching transient. Therefore, eliminating the spikes of gate-source voltage in a phase-leg configuration plays an important role in providing the safe driving and low switching losses. The proposed gate driver uses a simple voltage dividing circuit to generate a negative gate-source voltage and a passive triggered transistor with a series capacitor to suppress negative voltage spikes, which could satisfy the stringent requirements of high switching SiC MOSFETs with low cost and less complexity. The performance of proposed gate driver is evaluated by simulation and experimental results.
Starting Page	7023
Ending Page	7030
File Size	1143117
Page Count	8
File Format	PDF
e-ISBN	9781467371513
DOI	10.1109/ECCE.2015.7310643
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-20
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Phase-leg configuration Silicon carbide Gate driver Capacitors Switches Logic gates Auxiliary transistor Threshold voltage SiC MOSFET Transient analysis
Content Type	Text
Resource Type	Article

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