NDLI: A 110–250V 2MHz isolated DC-DC converter with integrated high-speed synchronous three-level gate drive

Content Provider	IEEE Xplore Digital Library
Author	Lin Cong Hoi Lee
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. Eng., Univ. of Texas at Dallas Richardson, Dallas, TX, USA (Lin Cong; Hoi Lee)
Abstract	This paper presents techniques for high-voltage isolated converters to achieve high power efficiency at high switching frequencies. To minimize the converter switching loss, an isolated quasi-square-wave zero-voltage switching three-level half-bridge architecture is adopted. An integrated synchronous three-level gate driver is proposed to ensure reliability of all eGaN power FETs and provide fast propagation delays for high-frequency converter operation. Thanks to the auto-reconfigurability of the proposed $V_{SW}-based$ dead-time controller in the gate driver, ZVS of all power FETs with minimal body diode conduction loss can be achieved in a wide input range (110V-250V) to guarantee the reliability of the proposed converter. Implemented in a 0.7μm 700V CMOS-LDMOS process, the proposed gate driver achieves ≤ 18ns propagation delays and enables a 250V 45W isolated three-level converter to achieve the peak power efficiencies of 94.2% and 89.1% at 1MHz and 2MHz, respectively.
Starting Page	1479
Ending Page	1484
File Size	414173
Page Count	6
File Format	PDF
e-ISBN	9781467371513
DOI	10.1109/ECCE.2015.7309868
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-20
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Field effect transistors Capacitors Windings Switches Zero voltage switching Logic gates IP networks
Content Type	Text
Resource Type	Article

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