NDLI: Gate driver for safe operation of depletion mode SiC JFETs

Content Provider	IEEE Xplore Digital Library
Author	Weber, S. Merkert, A. Mertens, A.
Copyright Year	2014
Description	Author affiliation: Inst. for Drive Syst. & Power Electron, Leibniz Univ. Hannover, Hannover, Germany (Weber, S.; Merkert, A.; Mertens, A.)
Abstract	Depletion mode silicon carbide junction field effect transistors provide the most promising perspective considering their on-state and switching characteristics as well as their robustness in future high-temperature applications. A major obstacle for an application in voltage source converters arises from the depletion mode characteristics of these devices. Therefore, additional efforts for the development of a safe gate drive system and startup strategies are necessary to ensure a safe operation. This paper deals with the development and design of a gate driver for depletion mode silicon carbide junction field effect transistors with redundant power supply and extended safety functionality, like undervoltage and short circuit detection. Printed circuit board integrated transformers with optimized winding layout have been designed to ensure low common mode coupling capacitance to exploit the high switching speed of the devices. The proposed gate driver is composed of commercially available components and integrated circuits suitable for ambient temperatures of up to 125°C.
Starting Page	5716
Ending Page	5722
File Size	3059433
Page Count	7
File Format	PDF
ISBN	9781479957767
DOI	10.1109/ECCE.2014.6954185
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-09-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Silicon carbide Short-circuit currents Windings Logic gates JFETs Voltage control
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Gate charge control of high-voltage Silicon-Carbide (SiC) MOSFET in power converter applications

Solid-state disconnects based on SiC power JFETs

Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs

Smart power: From problem statement to system solution

Electro-thermal characterization of 1.2 kV normally-on SiC JFETs under hard switch fault

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Evaluation of isolated gate driver for SiC MOSFETs

Evaluation of the operation of depletion-mode SiC power JFET in DC-DC converter applications

A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs

Gate driver for safe operation of depletion mode SiC JFETs

Similar Documents

Gate charge control of high-voltage Silicon-Carbide (SiC) MOSFET in power converter applications

Solid-state disconnects based on SiC power JFETs

Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs

Smart power: From problem statement to system solution

Electro-thermal characterization of 1.2 kV normally-on SiC JFETs under hard switch fault

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Evaluation of isolated gate driver for SiC MOSFETs

Evaluation of the operation of depletion-mode SiC power JFET in DC-DC converter applications

A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs

Gate driver for safe operation of depletion mode SiC JFETs