NDLI: Design and experimental validation of a high frequency gate driver for silicon carbide power modules

Content Provider	IEEE Xplore Digital Library
Author	Rujas, A. Garcia, G. Etxeberria-Otadu, I. Larranaga, U. Nieva, T.
Copyright Year	2014
Description	Author affiliation: Technol. Res. Center, IK4-IKERLAN, Arrasate-Mondragón, Spain (Rujas, A.; Garcia, G.; Etxeberria-Otadu, I.) \|\| CAF Power & Autom., Irura, Spain (Larranaga, U.; Nieva, T.)
Abstract	This paper presents the design, development and validation process of a high frequency Gate Driver for Silicon Carbide (SiC) Power Modules. The Gate Driver includes isolation and voltage adaptation functionalities as well as main protection functions (voltage clamp, over current and short-circuit). It has been designed following a modular approach, with a Base Driver (which depends on the electrical and mechanical features of the selected Power Module) and a Core Driver (which can be used with any module of the same voltage isolation requirements). The Gate Driver has been integrated and tested in two different SiC converters (both of them based on the CAS100H12AM1 module 1200V, 100A): a three-phase 50 kVA-100kHz inverter and a DC-DC interleaved 100kW-60kHz converter.
Starting Page	5729
Ending Page	5735
File Size	2264420
Page Count	7
File Format	PDF
ISBN	9781479957767
DOI	10.1109/ECCE.2014.6954187
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-09-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide High-power density Switching frequency Multichip modules Logic gates Inverters Clamps Voltage control Semiconductors gate driver
Content Type	Text
Resource Type	Article

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