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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Melly, T. Porret, A.-S. Enz, C.C. Kayal, M. |
| Copyright Year | 1998 |
| Description | Author affiliation: Electron. Lab., Fed. Inst. of Technol., Lausanne, Switzerland (Melly, T.) |
| Abstract | A low-power and low-voltage (LP/LV) RF front-end operating at 430 MHz and implemented in a standard 0.5 /spl mu/m digital CMOS process is described. Specific LP/LV bias techniques and design tradeoffs are discussed and their application to the design of a fully integrated direct-conversion receiver is presented. The RF building blocks including a 200 /spl mu/A LNA, two different 50 /spl mu/A mixers and a ring-oscillator with differential I-Q outputs consuming 300 /spl mu/A at 430 MHz, have been manufactured and their performances measured. Taking into account the severe power budget, a total double sideband (DSB) noise figure of 17 dB was achieved, together with a spurious free dynamic range of 55 dB at 60 kHz bandwidth, which is sufficient for the targeted application. |
| Starting Page | 503 |
| Ending Page | 506 |
| File Size | 441082 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780342925 |
| DOI | 10.1109/CICC.1998.695028 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-05-14 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS process Radio frequency Frequency shift keying Energy consumption Voltage 1f noise CMOS technology Noise figure Dynamic range Bandwidth |
| Content Type | Text |
| Resource Type | Article |
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