NDLI: A process for prevention of low temperature oxide growth over gold coated backside of silicon wafer

Content Provider	IEEE Xplore Digital Library
Author	Khan, M. Fatemi, H.
Copyright Year	1989
Description	Author affiliation: Adv. Micro Devices Inc., Sunnyvale, CA, USA (Khan, M.; Fatemi, H.)
Abstract	A process for the stabilization of gold film deposited on the back of silicon wafers was developed whereby low-temperature migration of silicon through gold and its oxidation could be prevented. The process consisted of rapid thermal alloying of a sputtered gold film deposited over a fine-ground backside of silicon wafer. The alloying was done at 400 degrees C in an inert environment for a duration of 30 s. The effectiveness of this treatment was demonstrated by improved wetting of an aged, alloyed film with melted gold preform used in gold-silicon eutectic die bonding compared with a nonalloyed specimen. Rapid thermal alloying at 400 degrees C in an inert atmosphere was found to be the most effective means of stabilizing the gold-coated wafer backside. Convection alloying was found to induce some surface oxidation. Surface finish had a notable effect on the resistance to oxidation of the alloyed film; smoother finish was found to be better. Evaporated gold film was found to have a thin underlying SiO/sub 2/ layer. Such a structure would be a potential hazard to the reliability of die bonding. In such a case, sputtering would be the preferred method of gold deposition.<>
Starting Page	214
Ending Page	223
File Size	2369227
Page Count	10
File Format	PDF
DOI	10.1109/EMTS.1989.68978
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-09-25
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Gold Alloying Silicon Oxidation Surface resistance Semiconductor films Microassembly Rapid thermal processing Aging
Content Type	Text
Resource Type	Article

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