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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lai, T.T. |
| Copyright Year | 1989 |
| Description | Author affiliation: AT&T Bell Lab., Allentown, PA, USA (Lai, T.T.) |
| Abstract | The electrostatic discharge (ESD) sensitivities of thin-film passive components from various hybrid integrated circuits were characterized using two models: the human body model (HBM) and the charge device model (CDM). It was found that thin-film Au conductors made with a minimum linewidth of 60 mu m were insensitive to ESD of 3000 V. Capacitors failed HBM voltages as low as 300 V when tested according to a specification that calls for multiple HBM discharges. However, this test procedure was not indicative of the capacitors' ESD robustness due to a cumulative effect of the capacitors' ESD charging voltages. Low-resistivity resistors were sensitive to ESD voltages as low as 600 V. High-resistivity resistors, when not RTV (room temperature vulcanization) encapsulated, were damaged due to arcing at lower ESD voltages than when encapsulated. On the basis of the experimental results and analysis, design rules for ESD robust low-resistivity resistors are recommended and a new meander resistor design is proposed.< |
| Starting Page | 229 |
| Ending Page | 239 |
| File Size | 1357722 |
| Page Count | 11 |
| File Format | |
| DOI | 10.1109/ECC.1989.77756 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1969-05-22 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electrostatic discharge Transistors Resistors Thin film circuits Biological system modeling Integrated circuit modeling Capacitors Low voltage Robustness Thin film devices |
| Content Type | Text |
| Resource Type | Article |
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