NDLI: A half inch size CCD image sensor overlaid with a hydrogenated amorphous silicon

Content Provider	IEEE Xplore Digital Library
Author	Chikamura, T. Komeda, T. Ishiko, D. Yoshino, M. Nakayama, M. Yano, K. Aoki, Y. Ueno, A. Yamada, T. Ishihara, T.
Copyright Year	1984
Description	Author affiliation: Matsushita Electric Ind. Co., Ltd., Osaka, Japan (Chikamura, T.)
Abstract	A half inch size CCD image sensor overlaid with a hydrogenated amorphous silicon (a-Si:H) as a photodetector has been designed and fabricated. The array consists of 506(V) × 404 (H) picture elements and the imaging area is 4.8(V)mm × 6.4(H)mm By employing the glow-discharged a-Si:H film for photoconductive film, high sensitivity of 0.014µA/x with IR filter (3200°K) and high S/N ratio more than 71dB for the fixed-pattern-noise was obtained. The S/N ratio of random noise is about 68dB. Smearing signal ratio is suppressed to 5% for incident light intensity of 5000 times of the saturation exposure. The blooming and highlight lag are completely suppressed by using CCD with vertical overflow drain (VOFD).
Starting Page	552
Ending Page	555
File Size	339640
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1984.190779
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1984-12-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Charge-coupled image sensors Amorphous silicon Optical films Charge coupled devices Optical imaging Image sensors Electrodes Photoconductivity Clocks Optical sensors
Content Type	Text
Resource Type	Article

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