NDLI: Enhancement of hot-electron currents in graded-gate-oxide (GGO)-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Ko, P.K. Tam, S. Hu, C. Wong, S.S. Sodini, C.G.
Copyright Year	1984
Description	Author affiliation: University of California, Berkeley, CA (Ko, P.K.)
Abstract	Graded-Gate-Oxide(GGO)-MOSFETs with various degrees of gate-drain(source) overlap (and grading thickness of the gate oxide near the polysilicon-gate edge) have been investigated for hot-electron generation. Compared with a conventional MOSFET, the GGO-MOSFET exhibits higher substrate and gate currents when the gate voltage is raised above a critical value(Vgc). Vgc is found to be dependent on the drain voltage. It is also a smooth function of the degree of gate-drain(source) overlap which can be controlled by the fabrication process. These experimental findings are supported by results obtained from the two-dimensional analysis of a similar device structure. Implications of the GGO phenomena on MOS technologies are discussed. Possible use of the GGO-MOSFET in EPROM is proposed.
Starting Page	88
Ending Page	91
File Size	379121
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1984.190649
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1984-12-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Voltage Electrochemical machining EPROM Current measurement Channel hot electron injection Fabrication Ice Space technology
Content Type	Text
Resource Type	Article

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