NDLI: A new complementary transistor structure for analog integrated circuits

Content Provider	IEEE Xplore Digital Library
Author	Kikkawa, T. Suganuma, T. Tanaka, K. Hara, T.
Copyright Year	1980
Description	Author affiliation: Nippon Electric Co., Ltd., Kawasaki City, Japan (Kikkawa, T.)
Abstract	A new complementary transistor structure has been developed. This paper presents a new technique which provides a fully complementary transistor structure for analog integrated circuits. The pnp transistor is fabricated by triple diffusion process in n type epitaxial layer on p type substrate, and is isolated from the substrate by inserting n- ion implanted layer between p+ collector buried layer and the substrate. This technique results in 5 to 10 times improvement in gain bandwidth product fT, maximum collector current IC(max)and collector saturation voltage VCE(sat)in comparison with conventional pnp transistors. Consequently, a fully complementary pnp transistor to npn transistors can be obtained.
Starting Page	65
Ending Page	68
File Size	492996
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1980.189754
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1980-12-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analog integrated circuits Substrates Impurities Epitaxial layers Frequency Low voltage Ion implantation Diffusion processes Monolithic integrated circuits Fabrication
Content Type	Text
Resource Type	Article

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A new complementary transistor structure for analog integrated circuits