NDLI: A Schottky-barrier CCD on GaAs

Content Provider	IEEE Xplore Digital Library
Author	Kellner, W. Bierhenke, H. Kniepkamp, H.
Copyright Year	1977
Description	Author affiliation: Siemens Forschungslaboratorien, München, Germany (Kellner, W.)
Abstract	Because of it's high electron-mobility GaAs is a promising semiconductor for high speed CCDs. To avoid the problems encountered with MIS-structures (e.g., high surface state density, frequency dependent C(U)-characteristics) a CCD with Schottky-contacts was proposed (Schuermeyer 1972). To our knowledge no operating GaAs-CCD has been reported until now. Basically the structure of our CCD is that of a GaAs MESFET with a sequence of gates. During operation, electrons are injected from the source into the depleted n-type layer. By proper biasing of the Schottky-gates the injected charge is stored or transferred along the interface between active layer and substrate. The signal is detected by use of a monolithically integrated read-out MESFET-amplifier. A three phase-four stage CCD was fabricated on sulphur-implanted active layers on semi-insulating GaAs. The ohmic contacts consist of a layer sequence of GeAuCrAu. CrAu-Schottky-contacts with 6.5 µm in length and 200 µm in width were used. Interelectrode spacing was 1.5 µm. SiO2was sputter-deposited for electrode crossover and passivation. Operation of the CCD at 500 kHz showed correct single pulse and step response. The number of stages were too small for accurately measuring the transfer inefficiency, which is estimated to be smaller than $5.10^{-3}.$ Elements with 8 or 16 stages for determining the transfer inefficiency and the maximum frequency of operation are presently under investigation.
Starting Page	599
Ending Page	599
File Size	50666
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1977.189331
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1977-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Charge coupled devices Gallium arsenide Frequency dependence MESFETs Electrons Substrates Signal detection Ohmic contacts Electrodes Passivation
Content Type	Text
Resource Type	Article

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