NDLI: High performance output Schottky $I^{2}L/MTL$

Content Provider	IEEE Xplore Digital Library
Author	Herman III, J.M.
Copyright Year	1977
Description	Author affiliation: Texas Instruments Incorporated, Dallas, Texas (Herman, J.M., III)
Abstract	The design and characterization of a second generation $I^{2}L/MTL$ gate with five decoupled collectors, each collector incorporating a PtSi Schottky diode, is presented. A deep buried-collector implant is used to minimize base current losses and increase the effective up gain. An increase in A.C. performance by 40 to 70% over the second generation gate with $N^{+}collectors$ is obtained which depends on the effective Schottky barrier height or logic swing in the region of extrinsic delay. For an effective Schottky barrier height of 0.65 eV, the gate is fully functional over the military temperature range of -55 to 125°C where $β^{eff}u≥$ 4 and $τ^{-}d$ = 10 ns at 100 µA injector current. At 25°C the speed power product is constant for low injector currents at 0.16 pJ and increases to 0.7 pJ at 100 µA injector current.
Starting Page	262
Ending Page	265
File Size	524509
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1977.189226
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1977-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Schottky diodes Logic Cathodes Character generation Schottky barriers Temperature distribution Process design Instruments Laboratories Implants
Content Type	Text
Resource Type	Article

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