NDLI: MIS solar cells: A review

Content Provider	IEEE Xplore Digital Library
Author	Pulfrey, D.L.
Copyright Year	1977
Description	Author affiliation: University of British Columbia, Vancouver, Canada (Pulfrey, D.L.)
Abstract	The metal-thin film insulator-semiconductor (MIS) structure is currently receiving much attention in solar cell studies. Both theoretical and practical investigations indicate that this structure offers a means of overcoming the principal deficiency of Schottky barrier solar cells, namely low open-circuit photovoltage, while maintaining the attractive features that have led the metal-semiconductor junction to be considered as a possible alternative to the p-n junction for large-area, terrestrial, solar cell applications. The thin insulating layer allows control over not only the magnitude of the dark current flowing through the diode, but also the dominant type (majority or minority carrier) of this current. Desirably low values of dark current have been postulated for majority devices incorporating suitable charge-trapping centers, located either within the insulator or at the semiconductor-insulator interface, and for minority carrier devices employing suitable insulator thicknesses, metal work functions and semiconductor resistivities. Theories based on these models are reviewed in this paper and are further examined, for relevance to practical solar cells, in the light of experimental data from a variety of MIS solar cells employing Si and GaAs substrates.
Starting Page	47
Ending Page	47
File Size	40105
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1977.189156
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1977-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Insulation Metal-insulator structures P-n junctions Dark current Schottky barriers Semiconductor diodes Schottky diodes Semiconductor-insulator interfaces Conductivity
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Open circuit voltage of MIS Schottky diode solar cells

Metal-insulator-semiconductor Schottky-type diodes of doped thiophene oligomers

Current collection mechanisms in p-n junction a-Si:H solar cells using spectral response analysis

Surface Tunneling Currents in Reverse Biased Narrow Bandgap P-N Junction

Determination of optimum parameters and characterization of MIS solar cells

On-State Behaviour of Diamond M-i-P Structures

40 Years of Inversion Layer Solar Cells: From MOS to Conducting Polymer/Inorganic Hybrids

Nanoscale metal-semiconductor-metal photodetectors fabricated on SOI-substrates

Interface state measurements and computer simulation studies of MIS solar cells

MIS solar cells: A review

Similar Documents

Open circuit voltage of MIS Schottky diode solar cells

Metal-insulator-semiconductor Schottky-type diodes of doped thiophene oligomers

Current collection mechanisms in p-n junction a-Si:H solar cells using spectral response analysis

Surface Tunneling Currents in Reverse Biased Narrow Bandgap P-N Junction

Determination of optimum parameters and characterization of MIS solar cells

On-State Behaviour of Diamond M-i-P Structures

40 Years of Inversion Layer Solar Cells: From MOS to Conducting Polymer/Inorganic Hybrids

Nanoscale metal-semiconductor-metal photodetectors fabricated on SOI-substrates

Interface state measurements and computer simulation studies of MIS solar cells

MIS solar cells: A review