NDLI: Stroboscopic scanning electron microscope to observe two-dimensional and dynamic potential distribution of semiconductor devices

Content Provider	IEEE Xplore Digital Library
Author	Ura, K. Fujioka, H. Hosokawa, T.
Copyright Year	1977
Description	Author affiliation: Osaka University, Osaka, Japan (Ura, K.)
Abstract	The stroboscopic SEM is very usuful to observe the dynamic voltage contrast image of semiconductor devices at a certain phase of repeating cycles. It consists of the usual SEM and the pulse gate which is inserted between the electron gun and the first condenser lens. The effect which affects the pulse width in the picosecond region is avoided in the design of the pulse gate. The shortest half-width of pulse is 0.2 ps. The spot size at usual pulse operations (several ps - several ns) is smaller than 0.1 µm. Examples of the two-dimensional voltage contrast images are shown in cases of 1 GHz Gunn diode and of a Simple 8 MHz IC.
Starting Page	502
Ending Page	505
File Size	348789
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1977.189301
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1977-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Scanning electron microscopy Semiconductor devices Space vector pulse width modulation Voltage Pulse measurements Frequency Lenses Optical pulses Pulse width modulation Cathode ray tubes
Content Type	Text
Resource Type	Article

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Stroboscopic scanning electron microscope to observe two-dimensional and dynamic potential distribution of semiconductor devices