NDLI: Future directions and technology requirements of wireless communications

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How deep sub micron will boost Internet appliances in the digital home network

Organic and polymer semiconductor devices

Future directions and technology requirements of wireless communications

Highly manufacturable 1 Gb NAND flash using 0.12 /spl mu/m process technology

A giga-scale assist-gate (AG)-AND-type flash memory cell with 20-MB/s programming throughput for content-downloading applications

Novel ultra high density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell

A high-density and low-cost self-aligned shallow trench isolation NOR flash technology with 0.14/spl mu/m/sup 2/ cell size

A 130 nm generation high density Etox/sup TM/ flash memory technology

Narrow distribution of threshold voltages in 4 Mbit MONOS memory-cell arrays and its impact on cell operation

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics

On the gate oxide scaling of high performance CMOS transistors

High performance single work-function tungsten gate CMOS devices for gigabit DRAM

Antimony assisted arsenic S/D extension (A/sup 3/ SDE) engineering for sub-0.1 /spl mu/m nMOSFETs : a novel approach to steep and retrograde indium pocket profiles

Anomalous diffusion in the extension region of nanoscale MOSFETs

Evaluation of material property requirements and performance of ultra-low dielectric constant insulators for inlaid copper metallization

Robust 130 mn-node Cu dual damascene technology with low-k barrier SiCN

CMP-free and CMP-less approaches for multilevel Cu/low-k BEOL integration

Newly developed electro-chemical polishing process of copper as replacement of CMP suitable for damascene copper inlaid in fragile low-k dielectrics

Integration of porous ultra low-k dielectric with CVD barriers

The ballistic FET: design, capacitance and speed limit

Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

3D analytical subthreshold and quantum mechanical analyses of double-gate MOSFET

Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation

Full quantum simulation, design, and analysis of Si tunnel diodes, MOS leakage and capacitance, HEMTs, and RTDs

Understanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway

Statistical model for stress-induced leakage current and pre-breakdown current jumps in ultra-thin oxide layers

Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements

Experimental evidence of hydrogen-related SILC generation in thin gate oxide

Soft breakdown free atomic-layer-deposited silicon-nitride/SiO/sub 2/ stack gate dielectrics

Reliability evaluation of HfSiON gate dielectric film with 12.8 /spl Aring/ SiO/sub 2/ equivalent thickness

Silicon single-electron memory and logic devices for room temperature operation

A multiple-valued logic with merged single-electron and MOS transistors

Si single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic

Memory characteristics of Si quantum dot devices with SiO/sub 2//ALD Al/sub 2/O/sub 3/ tunneling dielectrics

Carbon nanotube field effect transistors for logic applications

Efficient organic light emitting diodes and photodetectors

Visible electroluminescence from MOS capacitors with Si-implanted SiO/sub 2/ under dynamic operation

Strong and efficient light emission in ITO/Al/sub 2/O/sub 3/ superlattice tunnel diode

A new near-infrared-light-emitting diode of monodispersed nanocrystallite silicon

Field emitter arrays for low voltage applications with sub 100 nm apertures and 200 nm period

Simultaneous conduction band and valence band electron field emissions from n-type and p-type silicon field emitter arrays

Suppression of drain conductance dispersion in InP-based HEMTs for broadband optical communication systems

Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors

Heterogeneous integration: from substrate technology to active packaging

Programmed electrophoretic assembly and heterogeneous integration of optoelectronic devices at silicon substrates

Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Analog integration in a 0.35 /spl mu/m Cu metal pitch, 0.1 /spl mu/m gate length, low-power digital CMOS technology

CMOS device optimization for mixed-signal technologies

70 nm SOI-CMOS of 135 GHz f/sub max/ with dual offset-implanted source-drain extension structure for RF/analog and logic applications

A record high 150 GHz f/sub max/ realized at 0.18 /spl mu/m gate length in an industrial RF-CMOS technology

A 50-nm CMOS technology for high-speed, low-power, and RF applications in 100-nm node SoC platform

High-frequency response of 100 nm integrated CMOS transistors with high-K gate dielectrics

High performance 50 nm CMOS devices for microprocessor and embedded processor core applications

Highly stable SOI technology to suppress floating body effect for high performance CMOS device

A high performance 0.13 /spl mu/m SOI CMOS technology with a 70 nm silicon film and with a second generation low-k Cu BEOL

A high density 0.10 /spl mu/m CMOS technology using low K dielectric and copper interconnect

A 1.29 um/sup 2/ full CMOS ultra-low power SRAM cell with 0.12 um spacer-on-stopper (SOS) CMOS technology

An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0.7 - 1.4 V

Development of CVD-Ru/Ta/sub 2/O/sub 5//CVD-Ru capacitor with concave structure for multigigabit-scale DRAM generation

A comparative study of dielectric relaxation losses in alternative dielectrics

A highly manufacturable, low-thermal budget, void and seam free pre-metal-dielectric process using new SOG for beyond 60nm DRAM and other devices

Low temperature epitaxial growth of PZT on conductive perovskite LaNiO/sub 3/ electrode for embedded capacitor-over-interconnect (COI) FeRAM application

High thermal stability of poly-Si nodes with novel CrTiN/TiN double barrier layers for high-density ferroelectric memory applications

A compact model for rapidly shrinking MOSFETs

Gate current: Modeling, /spl Delta/L extraction and impact on RF performance

A general partition scheme for gate leakage current suitable for MOSFET compact models

Novel direct-tunneling-current (DTC) method for channel length extraction beyond sub-50nm gate CMOS

Analytical model of the programming characteristics of scaled MONOS memories with a variety of trap densities and a proposal of a trap-density-modulated MONS memory

A novel approach to quantum point contact for post soft breakdown conduction

TCAD software for ESD on-chip protection design

Gate bias induced heating effect and implications for the design of deep submicron ESD protection

A novel SCR macromodel for ESD circuit simulation

Frequency dependence of soft error rates for sub-micron CMOS technologies

Semiconductor technologies for high speed optical networking

Self-aligned selective-epitaxial-growth Si/sub 1-x-y/Ge/sub x/C/sub y/ HBT technology featuring 170-GHz f/sub max/

Ultra high speed SiGe NPN for advanced BiCMOS technology

High-speed SiGe:C bipolar technology

Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

Microelectronics meets molecular and neurobiology

Monolithic silicon optoelectronic biochips

Generation of large-area tunable uniform electric fields in microfluidic arrays for rapid DNA separation

A micro-watt metal-insulator-solution-transport (MIST) device for scalable digital bio-microfluidic systems

A micromachined integratable thermal reactor

Bias-dependent performance of high-power AlGaN/GaN HEMTs

A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate

Wide bandgap semiconductor devices and MMICs for RF power applications

COB stack DRAM cell technology beyond 100 nm technology node

Data retention time in DRAM with WSi/sub x//P/sup +/poly-Si gate NMOS cell transistors

Impact of rapid thermal annealing on data retention time for 256 Mb and 1 Gb DRAM technology

A 0.13 /spl mu/m full metal embedded DRAM technology targeting on 1.2 V, 450 MHz operation

A 0.13 /spl mu/m logic-based embedded DRAM technology with electrical fuses, Cu interconnect in SiLK/sup TM/, sub-7 ns random access time and its extension to the 0.10 /spl mu/m generation

Capacitance enhancement techniques for sub-100 nm trench DRAMs

A highly cost efficient 8F/sup 2/ DRAM cell with a double gate vertical transistor device for 100 nm and beyond

Sub-20 nm CMOS FinFET technologies

Triple-self-aligned, planar double-gate MOSFETs: devices and circuits

FD/DG-SOI MOSFET-a viable approach to overcoming the device scaling limit

Local mechanical-stress control (LMC): a new technique for CMOS-performance enhancement

High-performance symmetric-gate and CMOS-compatible V/sub t/ asymmetric-gate FinFET devices

Experimental evaluation of carrier transport and device design for planar symmetric/asymmetric double-gate/ground-plane CMOSFETs

An experimental study of low field electron mobility in double-gate, ultra-thin SOI MOSFETs

Ultrathin high-K gate stacks for advanced CMOS devices

Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

Thermally stable ultra-thin nitrogen incorporated ZrO/sub 2/ gate dielectric prepared by low temperature oxidation of ZrN

HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport

Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices

Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications

Device simulation of generation-recombination noise under periodic large-signal conditions

Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and, HD models based on MC generated noise parameters

Coupled Si and SiO/sub 2/ Monte Carlo device simulator for accurate gate current calculation

A technology simulation methodology for AC-performance optimization of SiGe HBTs

Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology

HBT before CMOS, a new modular SiGe BiCMOS integration scheme

A 0.13 /spl mu/m high-performance SOI logic technology with embedded DRAM for system-on-a-chip application

MOSFET design of 100 nm node low standby power CMOS technology compatible with embedded trench DRAM and analog devices

A 100 nm node CMOS technology for practical SOC application requirement

A new multiple transistor parameter design methodology for high speed low power SoCs

Comprehensive study of substrate noise isolation for mixed-signal circuits

Interconnecting device opportunities for gigascale integration (GSI)

Opportunities and challenges in ultra low k dielectrics for interconnect applications

Technologies for very high bandwidth electrical interconnects between next generation VLSI circuits

RF-interconnect for future inter- and intra-ULSI communications

Implementation and prospects for chip-to-chip free-space optical interconnects

High speed silicon lateral trench detector on SOI substrate

A low dark current stacked CMOS-APS for charged particle imaging

A high performance active pixel sensor with 0.18um CMOS color imager technology

An integrated color pixel in 0.18/spl mu/m CMOS technology

The effect of hot carriers on the operation of CMOS active pixel sensors

High-fill-factor, burst-frame-rate charge-coupled device

High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire

Novel GaN-based MOS HFETs with thermally oxidized gate insulator

GaN HFETs with excellent low noise performance at low power levels through the use of thin AlGaN Schottky barrier layer

Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion

Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs

Yield learning and volume manufacturing of high performance logic technologies on 200 mm and 300 mm wafers

300 mm process integration for 0.13 /spl mu/m generation with Cu/low-k interconnect technology

Innovation of 300 mm fab manufacturing with single wafer technology

Overcoming Cu/CVD low-k integration challenges in a high performance interconnect technology

Real impact of W/WNx/Poly-Si gate stack in volume production of high density DRAM

A 50 nm depleted-substrate CMOS transistor (DST)

High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node

Gate length scaling accelerated to 30 nm regime using ultra-thin film PD-SOI technology

Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimisation

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and ni SALICIDE

First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance

80 nm poly-Si gate CMOS with HfO/sub 2/ gate dielectric

Novel nitrogen profile engineering for improved TaN/HfO/sub 2//Si MOSFET performance

Reliability characteristics, including NBTI, of polysilicon gate HfO/sub 2/ MOSFET's

Degradation of current drivability by the increase of Zr concentrations in Zr-silicate MISFET

High quality CVD TaN gate electrode for sub-100 nm MOS devices

Robust ternary metal gate electrodes for dual gate CMOS devices

Localized heating effects and scaling of sub-0.18 micron CMOS devices

Thermal analysis of heterogeneous 3D ICs with various integration scenarios

Analyzing the effects of floating dummy-fills: from feature scale analysis to full-chip RC extraction

Analytical models for coupled distributed RLC lines with ideal and nonideal return paths

Effective on-current of MOSFETs for large-signal speed consideration

Analytical model for failure rate prediction due to anomalous charge loss of flash memories

Statistical modeling of reliability and scaling projections for flash memories

A model for anomalous leakage current in flash memories and its application for the prediction of retention characteristics

The mechanical stress effects on data retention reliability of NOR flash memory

Cu contamination induced degradation mechanism of embedded flash cell

Data retention behavior of a SONOS type two-bit storage flash memory cell

Current status and prospects of ferroelectric memories

A 3-D BiCMOS technology using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)

Impact of quantum mechanical effects on design of nano-scale narrow channel n- and p-type MOSFETs

Enhanced performance of strained Strained-Si MOSFETs on CMP sige virtual substrate

Organic thin film phototransistors and fast circuits

High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization

A new high-performance poly-Si TFT by simple excimer laser annealing on selectively floating a-Si layer

Suppression of leakage current in low-temperature metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor using an improved process sequence and a gate-modulated lightly-doped drain structure

An artificial fingerprint device (AFD) module using poly-Si thin film transistors with logic LSI compatible process for built-in security

Quantum tunneling Sb-heterostructure millimeter-wave diodes

Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: temperature characterization and comparison to conventional type-I HBTs and DHBTs

High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

InP/InGaAs DHBTs with 341-GHz f/sub T/ at high current density of over 800 kA/cm/sup 2/

High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications

Scalable Two-Transistor Memory (STTM)

Highly reliable 1 Mbit ferroelectric memories with newly developed BLT thin films and steady integration schemes

One-transistor PZT/Al/sub 2/O/sub 3/, SBT/Al/sub 2/O/sub 3/ and BLT/Al/sub 2/O/sub 3/ stacked gate memory

0.1 /spl mu/m-rule MRAM development using double-layered hard mask

OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications

SON (Silicon on Nothing) MOSFET using ESS (Empty Space in Silicon) technique for SoC applications

Impact of radical oxynitridation on characteristics and reliability of sub-1.5 nm-thick gate-dielectric FETs with narrow channel and shallow-trench isolation

Advantage of silicon nitride gate insulator transistor by using microwave excited high-density plasma for applying 100nm technology node

Realization of ultra-shallow junction: suppressed boron diffusion and activation by optimized fluorine co-implantation

Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (/spl sim/2/spl Omega///spl square/) without metal CMP nor etching

Investigations of stress sensitivity of 0.12 CMOS technology using process modeling

Modeling the nucleation and evolution of end of range dislocation loops in silicon

Modeling of end-of-range (EOR) defects for indium channel engineering

Monte Carlo impurity diffusion simulation considering charged species for low thermal budget sub-50 nm CMOS process modeling

Comprehensive model for nitrogen diffusion in silicon

Monte Carlo simulation of ion implantation (3-dimensional) and defect modeling during implantation process

Physical analysis of reliability degradation in sub-micron devices

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Impact of charging damage on negative bias temperature instability

SoC CMOS technology for NBTI/HCI immune I/O and analog circuits implementing surface and buried channel structures

Hot carrier enhanced gate current and its impact on short channel nMOSFET reliability with ultra-thin gate oxides

A novel hot-hole injection degradation model for lateral nDMOS transistors

A very high efficiency silicon bipolar transistor

Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz

A partial SOI technology for single-chip RF power amplifiers

High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 /spl mu/m SiGe:C BiCMOS technology

Base current tuning in SiGe HBT's by SiGe in the emitter

Integrated antennas on Si, proton-implanted Si and Si-on-quartz

A MEMS-based programmable diffraction grating for optical holography in the spectral domain

MEMS fingerprint sensor with arrayed cavity structures

The CAP-FET, a scaleable MEMS sensor technology on CMOS with programmable floating gate

Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

Dynamic macromodeling of MEMS mirror devices

Copper filling contact process to realize low resistance and low cost production fully compatible to SOC devices

High performance 0.1 /spl mu/m PD SOI tunneling-biased MOSFETs (TBMOS)

15 nm gate length planar CMOS transistor

1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz

A 185 GHz f/sub max/ SOI DTMOS with a new metallic overlay-gate for low-power RF applications

Novel fully-depleted SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

Record Q spiral inductors in standard CMOS

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Future directions and technology requirements of wireless communications

Content Provider	IEEE Xplore Digital Library
Author	Mochida, Y. Takano, T. Gambe, H.
Copyright Year	2001
Description	Author affiliation: Fujitsu Labs. Ltd., Kawasaki, Japan (Mochida, Y.)
Abstract	The third generation mobile services using W-CDMA first began in Japan. Further research on next mobile systems has already been started. The paper briefly describes the history of cellular systems and then introduces a technical outline of new generation systems. A broadband wireless communication requires a wide frequency bandwidth, huge delay spread tolerance, big transmission power and subscriber capacity. In order to obtain a smart solution, further digital processing approaches with the most advanced CMOS technology will be a key issue as well as the low-distortion and high-frequency power devices.
Sponsorship	Electron Devices Soc. IEEE
File Size	970176
File Format	PDF
ISBN	0780370503
DOI	10.1109/IEDM.2001.979393
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wireless communication History Mobile communication Multiaccess communication Delay CMOS technology Wireless LAN Energy consumption Control system synthesis Frequency modulation
Content Type	Text
Resource Type	Article

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