NDLI: Cu contamination induced degradation mechanism of embedded flash cell

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Cu contamination induced degradation mechanism of embedded flash cell

Content Provider	IEEE Xplore Digital Library
Author	Isobe, K. Kanda, M. Murakami, T. Totsuka, K. Moriuchi, M. Miyoshi, T. Yamada, S. Noguchi, T.
Copyright Year	2001
Description	Author affiliation: Syst. LSI Div., Toshiba Corp., Yokohama, Japan (Isobe, K.)
Abstract	Flash memory cell characteristics degradation modes induced by copper (Cu) contamination have been investigated in detail. In addition, process integration for embedded flash memory within logic devices using Cu interconnection has been established. Due to Cu contamination, after stress induced by channel hot electron injection, interface-states located at the drain overlap region are accelerated. This leads to degradation of programmed cell threshold voltage (Vt) lowering. After Fowler-Nordheim (F-N) current stress, generation of electron trap sites in tunnel oxide is enhanced by the Cu, resulting in degradation of gate stress characteristics and data retention characteristics. However, with F-N stress, the increment of the number of trapped electrons in the tunnel oxide is not severe for embedded NOR flash applications used within up to 10/sup 4/ write/erase (W/E) cycles. As a result, the erased cell Vt rise is almost the same as that of a reference sample.
Sponsorship	Electron Devices Soc. IEEE
File Size	319054
File Format	PDF
ISBN	0780370503
DOI	10.1109/IEDM.2001.979612
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Contamination Degradation Copper Stress Electron traps Flash memory cells Flash memory Logic devices Channel hot electron injection Acceleration
Content Type	Text
Resource Type	Article

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