NDLI: A 185 GHz f/sub max/ SOI DTMOS with a new metallic overlay-gate for low-power RF applications

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A 185 GHz f/sub max/ SOI DTMOS with a new metallic overlay-gate for low-power RF applications

Content Provider	IEEE Xplore Digital Library
Author	Hirose, T. Momiyama, Y. Kosugi, M. Kano, H. Watanabe, Y. Sugii, T.
Copyright Year	2001
Description	Author affiliation: Fujitsu Labs. Ltd., Atsugi, Japan (Hirose, T.)
Abstract	The dynamic threshold MOS transistor (DTMOS) built on an SOI substrate is one candidate to realize low-power one-chip RF and high-speed digital integrated circuits for wireless communication systems and optical fiber links. Scaling down the characteristic length of the DTMOS is aggressively performed, and the cut-off frequency (f/sub T/) has been drastically increased. Although the f/sub T/ is steeply rising every year, improvement of the maximum oscillation frequency (f/sub max/) is very slow. This is due to a limitation of the silicide based gate resistance (Rg) in the conventional logic CMOS process. Many interesting ways with optimized layout such as folded gate finger and multi-finger pattern have been proposed, and great efforts to make Rg small have been made. The most effective way to perform further reduction of Rg is to use a low resistive metal-gate or a metallic overlay-gate that is fabricated on the poly-Si fine gate. In this paper, we propose an 80 nm gate SOI-nDTMOS with a new gate structure. The key is to introduce a metallic overlay-gate process into the conventional logic CMOS fabrication process. Using the metallic overlay-gate structure, we achieved the f/sub max/ of 185 GHz at low bias voltage, which is, in our knowledge, the world record ever reported for Si MOSFETs.
Sponsorship	Electron Devices Soc. IEEE
File Size	289132
File Format	PDF
ISBN	0780370503
DOI	10.1109/IEDM.2001.979672
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Roentgenium MOSFETs CMOS logic circuits CMOS process Radio frequency Digital integrated circuits Wireless communication Optical fibers Cutoff frequency Silicides
Content Type	Text
Resource Type	Article

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