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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Soderbarg, A. Edholm, B. Olsson, J. Masszi, F. Eklund, K.H. |
| Copyright Year | 1995 |
| Description | Author affiliation: Dept. of Technol., Uppsala Univ., Sweden (Soderbarg, A.; Edholm, B.; Olsson, J.; Masszi, F.) |
| Abstract | A new type of DMOS transistor aimed at high voltage power amplifications in the Giga-Hertz region is integrated into a standard CMOS process. By optimising the design for high voltage and high frequency, remarkable good electrical behaviour is obtained. The frequency performance was measured to f/sub T/=4.6 GHz and f/sub MAX/=10 GHz for a device with a channel length of 0.3 /spl mu/m and a breakdown voltage V/sub BR//spl ges/60 V. For a similar device fabricated on the same chip and using the same process flow, but designed to handle voltages above 300 V, f/sub T/=1.8 GHz and f/sub MAX/=3.2 GHz were measured. |
| Starting Page | 975 |
| Ending Page | 978 |
| File Size | 372932 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780327004 |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1995.499379 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-12-10 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS process Doping Circuit simulation Frequency measurement Fluid flow measurement Length measurement Semiconductor device measurement Capacitance Low voltage CMOS technology |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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