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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jian Chen Hsu, J. Shengwen Luan Yuan Tang Liu, D. Haddad, S. Chi Chang Longcor, S. Jih Lien |
| Copyright Year | 1995 |
| Description | Author affiliation: Adv. Micro Devices Inc., Sunnyvale, CA, USA (Jian Chen; Hsu, J.; Shengwen Luan; Yuan Tang; Liu, D.; Haddad, S.; Chi Chang; Longcor, S.; Jih Lien) |
| Abstract | A new mode of channel length dependent degradation due to band-to-band tunneling current during the discharge of short channel flash memory device is discussed. The degradation is due to the holes created by band-to-band tunneling current and accelerated by the lateral electric field. The holes gain enough energy, are injected into the oxide and cause damage. The amount of degradation increases significantly as channel length decreases. This could be a fundamental limitation to the scaling of flash memory cells. A new discharge method is proposed to inhibit the hot hole injection and to obtain precise discharged Vt control. |
| Starting Page | 331 |
| Ending Page | 334 |
| File Size | 375469 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780327004 |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1995.499208 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-12-10 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Degradation EPROM Nonvolatile memory Fault location Flash memory Stress Tunneling Flash memory cells Hot carriers Electrons |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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