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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Crowder, S.W. Rousseau, P.M. Snyder, J.P. Scott, J.A. Griffin, P.B. Plummer, J.D. |
| Copyright Year | 1995 |
| Description | Author affiliation: Center for Integrated Syst., Stanford Univ., CA, USA (Crowder, S.W.; Rousseau, P.M.; Snyder, J.P.; Scott, J.A.; Griffin, P.B.; Plummer, J.D.) |
| Abstract | This study presents a systematic investigation of the effects of source/drain processing on the reverse short channel effect (RSCE) and is the first to demonstrate significant differences in the electrical behavior of identically processed silicon-on-insulator (SOI) and bulk devices due to dopant diffusion kinetics. In bulk and SOI devices, the RCSE due to implantation damage enhanced diffusion is minimized if a high temperature rapid thermal anneal follows the source/drain implantation. The magnitude of the V/sub th/ roll-up is significantly smaller in SOI than in bulk. When arsenic concentrations greater than 2.5/spl times/10/sup 20/ cm/sup -3/ are used, arsenic deactivation enhanced diffusion can cause a significant increase in V/sub th/ rollup. |
| Starting Page | 427 |
| Ending Page | 430 |
| File Size | 425532 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780327004 |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1995.499230 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-12-10 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Implants Threshold voltage Rapid thermal annealing Semiconductor process modeling MOS devices Boron MOSFET circuits Intersymbol interference Kinetic theory Temperature |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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