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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zongjian Chen Burr, J. Shott, J. Plummer, J.D. |
| Copyright Year | 1995 |
| Description | Author affiliation: Center for Integrated Syst., Stanford Univ., CA, USA (Zongjian Chen; Burr, J.; Shott, J.; Plummer, J.D.) |
| Abstract | A case study of MOSFET technology optimization for low voltage (1 V), low power applications is presented. Technology parameters (threshold voltage, oxide thickness) were optimized for power and speed with the consideration of balancing switching power and static power dissipation and the impact of process/ambient variation. Well and substrate ties were separated from supply rails and controlled separately to compensate for process and ambient variations. For the same switching speed, fabricated devices show a 4.5/spl times/ reduction in switching power when compared with standard devices operated at a higher supply voltage. An implementation of a self tuning system using the low/tunable threshold device in a VLSI environment is presented. |
| Starting Page | 63 |
| Ending Page | 66 |
| File Size | 345982 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780327004 |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1995.497183 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-12-10 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFETs Low voltage Threshold voltage Rails Very large scale integration Implants Temperature control Power dissipation Tunable circuits and devices Numerical analysis |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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