NDLI: A Row Chain Cell Array structure and current sense amplifier for PoRAM

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A Row Chain Cell Array structure and current sense amplifier for PoRAM

Content Provider	IEEE Xplore Digital Library
Author	Jung Ha Kim Chang Yong Ahn Sang Sun Lee
Copyright Year	2008
Description	Author affiliation: Dept. Electron. & Comput. Eng., Hanyang Univ., Seoul (Jung Ha Kim; Chang Yong Ahn; Sang Sun Lee)
Abstract	Polymer Random Access Memory (PoRAM) is a nonvolatile memory device that Au, N, Cs and etc trapping charges are inserted into polymer material. The cell array structure it is hard to read data correctly because of current interference between cells. In this paper, to compensate for these problems, a new cell array called 'Row Chain Cell Array' is suggested that does not have current interference. Furthermore, to read data, a current sense amplifier is more efficient and faster than the previous voltage sense amplifier due to low input impedance and low RC delay. We are verified by simulation.
Starting Page	1
Ending Page	4
File Size	1139886
Page Count	4
File Format	PDF
ISBN	9781424419562
DOI	10.1109/ICCDCS.2008.4542643
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-28
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Random access memory Impedance Nonvolatile memory Interference Polymers Magnetic materials Timing Circuits and systems Sun
Content Type	Text
Resource Type	Article

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