NDLI: Hot carrier reliability of high-speed SiGe HBT’s under accelerated collector-base avalanche bias

Content Provider	IEEE Xplore Digital Library
Author	Zhijian Yang Guarin, F. Hostetter, E. Ping-Chuan Wang
Copyright Year	2008
Description	Author affiliation: IBM Microelectron., Hopewell Junction, NY (Zhijian Yang; Guarin, F.; Hostetter, E.; Ping-Chuan Wang)
Abstract	As SiGe heterojunction bipolar transistor (HBT) based technologies reach $f_{T}$ performance above 200 GHz the transistors are more likely to be operating in the avalanche region of collector-base junction. This avalanche effect imposes a reliability concern due to the damage induced by high-energy avalanche charges (hot carriers) on the $Si-SiO_{2}$ interfaces. The impact of accelerated avalanche bias stress on 200 GHz SiGe HBTs was investigated and found to cause an increase in base current with no corresponding change of collector current. The increase of the base current correlates with the injected avalanche charge and its corresponding kinetic energy. A new empirical avalanche degradation model has been developed to predict the shifts in DC characteristics. Further studies showed that the SiGe HBT avalanche damage can be partially recovered by normal forward operation and/or high temperature anneal. The AC impact of this degradation mechanism has also been studied and found not to be significant. According to the reliability results of this study, the avalanche induced hot carrier degradation will not have a significant impact on the lifetime of the 200 GHz SiGe HBTs in a typical high speed digital circuit application.
Starting Page	1
Ending Page	7
File Size	620361
Page Count	7
File Format	PDF
ISBN	9781424419562
DOI	10.1109/ICCDCS.2008.4542671
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-28
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Silicon germanium Germanium silicon alloys Acceleration Heterojunction bipolar transistors Degradation Stress Kinetic energy Predictive models Temperature
Content Type	Text
Resource Type	Article

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