NDLI: Process considerations in reducing leakage current of PIN radiation detectors

Content Provider	IEEE Xplore Digital Library
Author	Resnik, D. Krizaj, D. Vrtacnik, D. Amon, S.
Copyright Year	2000
Description	Author affiliation: Fac. of Electr. Eng., Ljubljana Univ., Slovenia (Resnik, D.)
Abstract	PIN diode structures for radiation detection were designed and fabricated on high resistivity silicon wafers by means of planar process. Technological process development of the device and resulting electrical characteristics are presented. Extrinsic gettering with polysilicon and n/sup +/ phosphorus doped back side layer was employed. Surface passivation with dry or wet thermal oxide in combination with silicon nitride was performed in order to reduce surface leakage current over top p/sup +/ boron doped active area. Moreover, thermal budget was kept as low as possible due to preservation of bulk lifetime. Total leakage current as one of the most adequate parameter to evaluate process was monitored on fabricated radiation detectors and test structures. Best average values of leakage current density achieved were in low nA/cm/sup 2/ range per 100 /spl mu/m depletion width for the case of gettering with LPCVD polysilicon phosphorus doped layer on the rear side.
File Size	674049
File Format	PDF
ISBN	0780357663
DOI	10.1109/ICCDCS.2000.869830
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-03-17
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage current Radiation detectors Silicon Gettering Conductivity Electric variables Passivation Boron Condition monitoring Radiation monitoring
Content Type	Text
Resource Type	Article

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