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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mohata, D.K. Pawlik, D. Liu, L. Mookerjea, S. Saripalli, V. Rommel, S. Datta, S. |
| Copyright Year | 2010 |
| Description | Author affiliation: Pennsylvania State University, 16802, USA (Mohata, D.K.; Liu, L.; Mookerjea, S.; Saripalli, V.; Datta, S.) || Rochester Institute of Technology, NY, 14623-5604, USA (Pawlik, D.; Rommel, S.) |
| Abstract | Inter-band tunnel field effect transistors (TFETs) have recently gained a lot of interest because of their ability to eliminate the 60mV/dec sub-threshold slope (STS) limitation in MOSFET. This can result in higher ION-IOFF ratio over a reduced gate voltage range, thus predicting TFETs superior for low supply voltage (VDD ≤ 0.5V) operation. Unlike Si and Ge, III-V semiconductors like In0.53Ga0.47As have smaller tunneling barrier and tunnelling mass, thus making them a design choice to eliminate drive current (ION) limitations in TFETs [1–2]. In this work, (i) we present the experimental demonstration of record peak current density (JPEAK) In0.53Ga0.47As Esaki tunnel diode, formed using MBE grown in-situ doped epitaxial layers [4]. (ii) Using a non-local tunneling model in Sentaurus device simulator [3], the measured current-voltage characteristics (J-V) is modeled and the model parameters are calibrated. (iii) Novel In0.53Ga0.47As ultra thin body (7nm)-double gate-TFET (UTB-DG-TFET) design to boost I{ON} is discussed using the calibrated non-local tunneling model. (iv) Pulse transient response of the novel In0.53Ga0.47As TFET inverter is presented and compared with Si based MOSFET inverters at a supply voltage of 0.5V. |
| Starting Page | 103 |
| Ending Page | 104 |
| File Size | 1115010 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424465620 |
| ISSN | 15483770 |
| e-ISBN | 9781424465644 |
| e-ISBN | 9781424465637 |
| DOI | 10.1109/DRC.2010.5551856 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-06-21 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Switches |
| Content Type | Text |
| Resource Type | Article |
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