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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Franklin, A.D. Bol, A.A. Zhihong Chen |
| Copyright Year | 2010 |
| Description | Author affiliation: IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, NY 10598, USA (Franklin, A.D.; Bol, A.A.; Zhihong Chen) |
| Abstract | In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (Lg) and 2) the less-emphasized source/drain contact lengths (CL). Until recently, many believed that Lg could not be scaled in SWCNT field-effect transistors (CNTFETs) without incurring severe short channel effects (SCEs). However, using an improved device geometry, it has now been shown that proper Lg scaling can be achieved with actual enhancement in performance [1]. In this presentation, a more complete picture of Lg scaling is given, along with the first reported results of contact length scaling. |
| Starting Page | 275 |
| Ending Page | 276 |
| File Size | 1092478 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424465620 |
| ISSN | 15483770 |
| e-ISBN | 9781424465644 |
| e-ISBN | 9781424465637 |
| DOI | 10.1109/DRC.2010.5551963 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-06-21 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CNTFETs Resistance Logic gates Performance evaluation Ballistic transport Threshold voltage Contact resistance |
| Content Type | Text |
| Resource Type | Article |
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