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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tron-Min Chen Shui-Jinn Wang Kai-Ming Uang Shiue-Lung Chen Ching-Chung Tsai Hon-Yi Kou Wei-Chi Lee Hon Kuan |
| Copyright Year | 2007 |
| Description | Author affiliation: Nat. Cheng Kung Univ., Tainan (Tron-Min Chen; Shui-Jinn Wang) |
| Abstract | Based on experimental results which reveal that the contact of indium-zinc-oxide (IZO) and IZO/Ti to n-GaN layer is Schottky and ohmic, respectively, localized Ti deposition associated with a transparent IZO layer is proposed to serve as both current blocking and current spreading layer. In addition, an anisotropic mesa etching on the surface layer (n-GaN) of regular vertical-conducting metal-substrate GaN-based light-emitting diodes (VM-LEDs) is also proposed to further decrease the resistance difference between the outside path and the inner one. The effectiveness of the proposed schemes were verified by a two-dimensional device simulator (ISE-TCAD), which indicates that significant immune of current crowding under cathode contact pad would be possible once an optimal combination of the n-GaN layer etching depth and width, IZO thickness, and Schottky blocking width has been achieved. In experiments, 40-mil LEDs with an anisotropic mesa etching of 400 mum in width and 2 mum in depth, 200 mum in Schottky blocking width, and a 300-nm-thick IZO layer have been successfully fabricated. Typical improvement in light output power by about 25% at an injection current of 350 mA as compared to the regular VM-LEDs has been obtained. |
| Starting Page | 83 |
| Ending Page | 84 |
| File Size | 1841657 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424411016 |
| ISSN | 15483770 |
| DOI | 10.1109/DRC.2007.4373661 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-06-18 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Light emitting diodes Etching Anisotropic magnetoresistance Gallium nitride Surface resistance Proximity effect Power generation Conductivity Microelectronics Contacts |
| Content Type | Text |
| Resource Type | Article |
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