NDLI: High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces

Content Provider	IEEE Xplore Digital Library
Author	Ya-Ju Lee Hao-Chung Kuo Tien-Chang Lu Shing-Chung Wang
Copyright Year	1965
Abstract	High light-extraction (external quantum efficiency ~40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. This novel LED structure includes one top transmitted diffuse surface and another diffuse omnidirectional reflector (ODR) on the bottom of a LED chip. The diffusive ODR consists of a roughened p-type GaN layer, an indium-tin-oxide (ITO) low refractive index layer, and an Al layer. The surface of the p-type GaN-layer was naturally roughened while decreasing the growth temperature to 800 degC. After flip-bonding onto a Si substrate by AuSn eutectic metal and laser lift-off processes to remove the sapphire substrate, an anisotropic etching by dilute potassium hydroxide (KOH) was employed on the N-face n-GaN layer to obtain transmitted diffuse surfaces with hexagonal-cone morphology. The double diffused surfaces LEDs show an enhancement of 56% and 236% in light output power compared to single side diffused surface and conventional LEDs, respectively. The devices also show a low leakage current in the order of magnitude of 10 ^-8 A at -5 V and a calculated external quantum efficiency of about 40%. The high scattering efficiency of double diffused surfaces could be responsible for the enhancement in the device light output power
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1196
Ending Page	1201
Page Count	6
File Size	1807436
File Format	PDF
ISSN	00189197
Volume Number	42
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Surface morphology Rough surfaces Surface roughness Power generation Gallium nitride Indium tin oxide Refractive index Temperature Anisotropic magnetoresistance light-extraction efficiency Double diffuse surfaces GaN light-emitting diodes (LEDs)
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography

Improvement of External Extraction Efficiency in GaN-Based LEDs by $ hbox{SiO}_{2}$ Nanosphere Lithography

Enhanced Light Extraction Mechanism of GaN-Based Light-Emitting Diodes Using Top Surface and Side-Wall Nanorod Arrays

Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency

Titanium oxide nanotube arrays for high light extraction efficiency of GaN-based vertical light-emitting diodes

Enhanced Extraction Efficiency of InGaN/GaN Light-Emitting Diodes by Liquid Phase-Deposited Zinc-Oxide-Textured Window Layer

GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars

Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes

Vertical GaN-Based LEDs With Naturally Textured Surface Formed by Patterned Sapphire Substrate With Self-Assembled Ag Nanodots as Etching Mask

High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces

Similar Documents

Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography

Improvement of External Extraction Efficiency in GaN-Based LEDs by $ hbox{SiO}_{2}$ Nanosphere Lithography

Enhanced Light Extraction Mechanism of GaN-Based Light-Emitting Diodes Using Top Surface and Side-Wall Nanorod Arrays

Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency

Titanium oxide nanotube arrays for high light extraction efficiency of GaN-based vertical light-emitting diodes

Enhanced Extraction Efficiency of InGaN/GaN Light-Emitting Diodes by Liquid Phase-Deposited Zinc-Oxide-Textured Window Layer

GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars

Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes

Vertical GaN-Based LEDs With Naturally Textured Surface Formed by Patterned Sapphire Substrate With Self-Assembled Ag Nanodots as Etching Mask

High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces