NDLI: Thermal management and device failure assessment of high-power AlGaN/GaN HFETs

Content Provider	IEEE Xplore Digital Library
Author	Kuball, M. Rajasingam, S. Sarua, A. Hayes, J.M. Uren, M.J. Martin, T. Balmer, R.S. Hughes, B.T. Hilton, K.P.
Copyright Year	2002
Description	Author affiliation: H.H. Wills Phys. Lab., Bristol Univ., UK (Kuball, M.; Rajasingam, S.; Sarua, A.; Hayes, J.M.)
Abstract	Self-heating effects limit the performance of high-power AlGaN/GaN HFETs. Knowledge of the temperature in the active area of AlGaN/GaN HFETs is essential for optimizing device design, performance and reliability, however, direct measurement of this temperature is not readily achieved by IR techniques. Improved temperature information can be obtained by micro-Raman spectroscopy allowing temperature measurements with 1 /spl mu/m spatial resolution, important for local device geometries in the micron/sub-micron dimension range. This novel approach allows fast temperature measurements with minimal influence on device performance. We illustrate the use of micro-Raman spectroscopy for thermal management and device failure assessment by studying effects of device design and substrate on temperature in active high-power AlGaN/GaN HFETs. Temperature evolution up to device failure was investigated.
Starting Page	99
Ending Page	100
File Size	109898
Page Count	2
File Format	PDF
ISBN	0780373170
DOI	10.1109/DRC.2002.1029533
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal management Aluminum gallium nitride Gallium nitride HEMTs MODFETs Temperature measurement Spectroscopy Design optimization Area measurement Temperature distribution
Content Type	Text
Resource Type	Article

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